青云英语翻译

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翻译结果1翻译结果2 翻译结果3翻译结果4翻译结果5

翻译结果1复制译文编辑译文朗读译文返回顶部

正在翻译,请等待...

翻译结果2复制译文编辑译文朗读译文返回顶部

ptsi似乎产生了迁移的pt的MOSI2薄膜,如一节中所述3.2。 的电阻薄膜,ptsi是形成了,是低于该中心的MOSI2薄膜由于半导体的物业一样的阻力,减少在较高的温度。

翻译结果3复制译文编辑译文朗读译文返回顶部

看来 PtSi 生成与 Pt 迁移到 MoSi2 薄膜,如 3.2 节中所述。薄膜,被形成了 PtSi,抵抗低于在 MoSi2 薄膜由于具有抵抗的半导体类似属性的中心,而减少在更高的温度。

翻译结果4复制译文编辑译文朗读译文返回顶部

看来PtSi引起了与Pt的迁移入MoSi2薄膜,正如第3.2部分所描述。薄膜的抵抗, PtSi被形成,低于那在MoSi2薄膜的中心由于抵抗的象半导体的物产,减少在高温。

翻译结果5复制译文编辑译文朗读译文返回顶部

看起来PtSi在第3.2部分引起了以Pt的迁移入MoSi2薄膜,如所描述。 抵抗薄膜, PtSi被形成了的地方,低于那在MoSi2的中心薄膜由于半导体象抵抗的物产,减少在高温。
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aIt appears that PtSi was generated with the migration of Pt into the MoSi2 thin film, as described in Section 3.2. The resistance of the thin film, where PtSi was formed,was lower than that at the center of the MoSi2 thin film because of the semiconductor-like property of the resistance, which decreased at higher tempe 看起来PtSi在第3.2部分引起了以Pt的迁移入MoSi2薄膜,如所描述。 抵抗薄膜, PtSi被形成了的地方,低于那在MoSi2的中心薄膜由于半导体象抵抗的物产,减少在高温。 [translate]